| 摘要 |
PURPOSE:To prevent a wafer from contacting to the inner wall of a furnace as wel as to enable to reduce the generation of foreign matters by a method wherein a vertical type constitution, in which the space where the material to be treated is present almost along vertical direction, is provided. CONSTITUTION:A space in which a wafer retainer 12 will be inserted is ar ranged in the vertical direction. A number of wafers 11 held in the wafer retain er 12 are inserted in a vertical type diffusion furnace (heat treating furnace) 13 in almost horizontal state by holding the wafers in a jig holder 16 and rotat ing the jig 12 at an angle of 90 degree. The diffusion furnace 13 has a heater 14, and the carrier gas 15 containing impurities is introduced from the lower side. A diffusion treatment is performed by introducing gas 15 into the furnace 13 and the wafers 11 are heated up to the prescribed temperature using the heater 14. On the other hand, the wafer retianing jig 12 is maintained in the state wherein it does not come in contact with the inner wall of the furnace using the jig holder 16. |
