| 摘要 |
PURPOSE:To obtain optical output monitor currents in a larger value by making the groove width of a current constriction channel for a light-receiving element section wider than a semiconductor laser section. CONSTITUTION:The groove width (15mum) of a groove section 12 in a light- receiving element section B is made wider than that (5mum) of a groove section 11 in a semiconductor laser section A. To prepare such structure, an N-type GaAs layer 2 is grown on a P-type GaAs substrate 1, and grooves are formed through etching by a mask pattern. Each layer is grown after etching, and removed vertically through etching again, thus preparing the end surface of a resonator. Monitor photocurrents having optical output-to-monitor photocurrent characteristics of approximately quadruple as much as conventional semiconduc tor lasers are obtained, and optical outputs and the linearity of monitor currents are also excellent in the same extent as conventional semiconductor lasers. |
