| 摘要 |
<p>PURPOSE:To enhance the bonding performance by lessening the effect of an outgas thereby avoiding the release of a bonding wire by a method wherein a prebaked lead frame is mounted on the bonding base of a bonding device to be bonded at specific temperature while vacuumizing from the bottom surface of the bonding base. CONSTITUTION:After bonding a semiconductor chip onto a stage of lead frame 8 using a bonding agent, the lead frame 81 is prebaked by heating it at the temperature of 180 deg.C in vacuum atmosphere and then this prebaked lead frame 8 is mounted on the bonding base 2 of a bonding device to be bonded at the temperature not exceeding 200 deg.C while vacuumizing from the bottom surface of the bonding base 2. Besides, the bonding process is effectively performed by feeding nitrogen gas onto the surface of the bonding base 2. In these procedures, the bonding temperature is specified not to exceed 200 deg.C so that a resin may not be decomposed in the bonding step not to produce an out gas containing chlorine base gas.</p> |
