| 摘要 |
Infrared detectors, particularly matrix detectors comprising platinum silicide diodes as light-sensitive elements, are described. To prevent secondary images whenever a given point is intensely illuminated, said images appearing as spots away from said point, it is suggested that the width of the semiconductor substrate (10) supporting said light-sensitive elements (12) be reduced, by mechanical lapping and optionally thereafter by chemical etching, to between approximately 10 and 50 micrometers.
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