| 摘要 |
Infrared detectors, particularly matrix detectors comprising platinum silicide diodes as light-sensitive elements, are described. To prevent secondary images whenever a given point is intensely illuminated, said images appearing as spots away from said point, it is suggested that the light-sensitive elements be integrated with the front surface of a heavily doped semiconductor substrate (10) supporting said elements (12), and that said detector then be illuminated via said front surface of the substrate. This doping allows the absorption of the obliquely reflected stray radiation which causes the secondary images. The substrate preferably comprises a lightly doped epitaxial surface layer (11) on which said light-sensitive elements are formed. |
