| 摘要 |
PURPOSE:To make it possible to detect an alignment mark by a method wherein the beam passed through the wiring layer on an alignment is made to irradiate a semiconductor substrate, and the reflected beam or transmitted beam is detected. CONSTITUTION:When an alignment mark is detected, an X-ray irradiation part 1 is moved, the X-rays are scanned on a semiconductor substrate 2, and the X-rays are received smoothly by interlocking to the X-ray receiving part 3 with the X-ray irradiation part 1. An insulating film 4, consisting of SiO2 is formed on the surface part of the silicon semiconductor substrate 2, a contact hole 5, which constitutes an alignment mark, is formed on the insulating film 4, and a flattened aluminum wiring layer 6 is formed on the surface. The detection of the above-mentioned alignment mark is conducted utilizing the fact that the aluminum 6 is thickly formed on the part of the hole 5 constituting the alignment mark, it is thinly formed on the part where the hole 5 is not formed, and a contrast is formed in the transmitted X-rays by the difference of thicknesses. |
