| 摘要 |
PURPOSE:To make a burying growth smoothly by utilizing the plane of [110] as a growth stop plane. CONSTITUTION:An n-type buffer layer 2 or a p-type guide layer 5 is arranged to make a crystal growth on a (100) n-type GaAs substrate 1 by the MOVPE technique. All the layers from the p-type guide 5 to a n-type clad layer 3 are etched to from a mesa stripe in the direction of (001) or in the direction of [010]. In succession, a high resistance clad layer 8 and a GaAs cap layer 9 are arranged to make a selection growth on the side of the mesa stripe. As the material of the high resistance clad layer 8, AlxGa1-xAs (where x>0.4 is selected). At the same time, a triangle-profiled layer 8' is formed on the mesa stripe where the plane of [110] is used as a growth stop plane. On the regions other than the growth stop plane, a GaAs cap layer 9 is grown by crystal lization. After the crystal growth the triangle-shaped layer 8' is selectively etched based on the application of the differential etching rate between the AlxGa1-xAs and GaAs. The end face is formed by conducting etching or the like where an electrode is mounted. This construction makes it possible to grow selectively a burying layer whose surface is smooth by using growth stop on the crystal plane. |
