| 摘要 |
A method for preparing an amorphous silicon solar cell is disclosed which comprises forming, on a substrate, a first electrode, a first conductive film, a thinner first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode in this order: the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of: (a) depositing a semiconductor film containing 20 atom% or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 ANGSTROM , and then (b) modifying the deposited film, the sequence of steps being repeated multiple times. The solar cell formed by the above-mentioned method is particularly excellent in long-term stability. <IMAGE> |
