| 摘要 |
Identically positioned alignment marks are formed on opposite sides of a semiconductor wafer by (i) coating both wafer sides with an insulating layer (2,3); (ii) directing high energy heavy ions onto the front side layer (2), the ions penetrating both layers (2,3) nuclear tracks (4, 4') to form single disturbed lattice nuclear tracks (4, 4') in the layers without disturbing the crystal latt-ice of the wafer; (iii) etching the nuclear tracks (4,4') to form identically positioned pores in the layers; and (iv) using the pores as alignment marks for further processing. |
