| 摘要 |
PURPOSE:To reduce a stress even in a semiconductor laser using a substrate having a step by forming a semiconductor layer via a buffer layer on the semiconductor substrate, forming the step on the surface, and forming a layer having an active layer on the semiconductor layer. CONSTITUTION:A semiconductor layer 11 made of the first compound semiconductor is formed via a buffer layer 10 on a semiconductor substrate 9, and a step is formed on the surface of the semiconductor layer. layers 11-15 containing an active layer 13 are formed on the layer 11. The layers 10 and 13 includes mixed crystal of the first compound semiconductor and the second compound semiconductor different from the first semiconductor. Thereafter, ohmic electrodes 17, 18 are formed. |
