SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To suppress the power loss of a semiconductor integrated circuit device by employing an insulated gate field effect transistor for the injector transistor of an I<2>L and a junction field effect transistor for driver transistor, thereby improving the switching speed. CONSTITUTION:An n type semiconductor layer 52 having 10<12>-10<15>/cm<3> of impurity density is formed in a thickness of 2-10mum on an n type semiconductor substrate 51 having 10<18>-10<21>/cm<3> of impurity density. Then, p type semiconductor regions 54, 55 having 1-3mum of depth and 10<18>-10<20>/cm<3> of impurity density are selectively formed on the layer 52. A gate electrode 73 is formed via a gate insulating film 72g on the surface of a semiconductor region disposed between the layers 54 and 55. The layer 54 and the layer 55 brought in opposed position with the layer 54 form the source and the drain of an injector transistor Qi1, the residual layer 55 forms the gate of a driver transistor Qd2. Thus, a logic element having high carrier injection efficiency and small carrier storage effect can be obtained.