| 摘要 |
PURPOSE:To obtain a chemical magnifying type resist without varying a pattern line width, etc., with a required time between exposure and a heat treatment by constituting a base polymer with polymer incorporating a tertiary amine as one component. CONSTITUTION:The base polymer is consisting of a polymer incorporating a tertiary amine as one component. When the constitution is formed in such a manner, in the case where an acid (H<+>)3 generated with a photoreaction is diffused, the acid is trapped with a domain 4 consisting of vinyl pyridine formed with the micro phase separation locating in the vicinity and the extension of the diffusion length is prevented and the variation of the pattern line width attended with the time from exposure to heat treatment for the resist is reduced. Hence it is prevented that the diffusion length of the acid generated with photoreaction attended with exposure depends on the required time length from exposure to heat treatment after exposure and the dimentional accuracy of the resist pattern is improved. |
