| 发明名称 |
Method for the manufacture of an insulated gate field effect semiconductor device using photo enhanced CVD |
| 摘要 |
A method of manufacturing an TGFET is described. The gate electrode comprises Mo, Ti, W, MOSi2, WSi2, TiSi2 or mixtures thereof formed on a photo-CVD nitride layer.
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| 申请公布号 |
US5094966(A) |
申请公布日期 |
1992.03.10 |
| 申请号 |
US19900563855 |
申请日期 |
1990.08.07 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
| 分类号 |
H01L21/28;H01L21/283;H01L21/318;H01L21/336;H01L29/49;H01L29/51;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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