| 摘要 |
PURPOSE:To enable the bit constitution of a read/write memory device to be changed at the actual use time of a semiconductor memory device, by sifting the output content of a specific bit to another bit output, at the inputting time of a shift input signal, supplying the same signal to both write input data, and writing the signal selectively. CONSTITUTION:When a shift control input Sc is '1', the bit output Y0 of a memory cell 1, or the bit output Y1 of a memory cell 2, according to the presence/absence of the signal of a shift input S, is outputted to a memory device output Z0. And when the shift control input Sc is '0', the bit outputs Y0 and Y1 of the memory cells 1 and 2 are outputted to memory device outputs Z0 and Z1, respectively. When the shift input Sc is '0', a device is operated as the read/write memory device constituting of four words by two bits, and when the shift in put Sc is '1', it is operated as the read/write memory device constituting of eight words by one bit, and having the memory device output Z0 as the output, by setting the signals of data input D0 and D1 at the same level.
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