| 摘要 |
PURPOSE:To realize low defect density by improving the crystallizability of an silicon single crystal thin-film formed onto an oxide single crystal thin-film such as a spinel single crystal thin-film and a stabilized zirconium single crystal thin-film shaped onto a sapphire single crystal substrate which has been difficult to be manufactured extremely. CONSTITUTION:An oxide single crystal thin-film 2 is formed onto a sapphire (alpha-Al2O3) single crystal substrate 1, an silicon single crystal thin-film 3 is shaped onto the thin-film 2, and an amorphous silicon layer 4 is formed near the interface of the oxide single crystal thin-film 2 and the silicon single crystal thin-film 3. Solid growth is conducted, using single crystal silicon on the interface of the silicon single crystal thin-film 3 and the amorphous silicon layer 4 as a seed crystal in a hydrogen or nitrogen atmosphere, the amorphous silicon layer 4 is improved into an excellent silicon single crystal thin-film 31 having low defect density, and an amorphous silicon layer 5 is shaped. An silicon single crystal is grown in the surface direction, employing the silicon single crystal thin-film 31 in a section being in contact with the amorphous silicon layer 5 as a seed crystal, thus forming an silicon single crystal thin-film 32.
|
