| 摘要 |
PURPOSE:To obtain a new polishing solution which does not cause the contamination by an alkaline metal by dripping a solution in which an abrasive composed of fine particles of high-purity quartz has been dispersed to an alkali solution or an acid solution having an oxidation and dissolution action such as an ammonia aqueous solution to which hydrogen peroxide has been added. CONSTITUTION:A surface table made of a metal, an alloy or a ceramic is turned. A solution in which about 1 to 20% of hydrogen peroxide water has been added to an ammonia aqueous solution, at a pH value of about 10 to 12, in which high-purity SiO2, particles at a grain size of about 0.02mum have been dispersed is dripped on a cloth. A silicon wafer to be processed is pressurized to its face at a pressure of 100 to 500g/cm<2> and is rubbed. The silicon wafer is fixed to a flat support stand which has been arranged in parallel with the face of the surface table; its surface is pressurized by a surface etching effect by the ammonia aqueous solution to which the hydrogen peroxide has been added and by a processing effect by the SiO2, particles in the solution. |
