发明名称 JOINING METHOD OF SEMICONDUCTOR ELEMENT TO LEAD FRAME
摘要 <p>PURPOSE:To prevent the generation of cracks in a semiconductor package without generating any warping on a lead film as in the case when an insulation film is used by directly dropping an insulation high temperature softening type bonding agent and connecting a semiconductor element with the lead film. CONSTITUTION:A heated and liquefied or semi-liquefied insulating high temperature softening type bonding agent 21 is adapted to drop on a region where a lead frame will be mounted from a specified elevation. The spots over which the bonding agent 21 is arranged to drop, must include such a location which can be insulated definitely and connected with a generation device to a satisfactory extent in a tab 27. As for other spots, the bonding agent is spot-dropped at the tip of an inner lead 19 as occasion demands. The spot drop method of the bonding agent 21 calls for a spot-drop device capable of dropping bonding agent over the regim where a lead frame will be mounted with accuracy, such as a dispenser type automatic spot-drop device.</p>
申请公布号 JPH0475355(A) 申请公布日期 1992.03.10
申请号 JP19900189807 申请日期 1990.07.18
申请人 HITACHI CABLE LTD 发明人 NAGAYAMA SADAO;SUZUMURA TAKASHI
分类号 H01L21/52 主分类号 H01L21/52
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