| 摘要 |
PURPOSE:To make it possible to reduce the area of a chip and to facilitate the achievement of the high speed and the high integration density of a semicon ductor device by arranging a bonding pad of a metal wiring so that the pad is overlapped on an element region. CONSTITUTION:An element region is provided immediately beneath a bonding pad 7 of a metal wiring 6. For example, an N well 2, an N<+>-type diffused layer 3 and a P<+>-type diffused layer 4 are formed on a P-type silicon substrate 1. Thus protecting diodes D1 and D2 are formed. The protecting diodes D1 and D2 are connected with a metal wiring 6 through the opening in an insulating film 5. The film is further covered with a surface protecting insulating film 5a. The sufficient area is provided for the bonding pad 7 in the opening of the insulating film 5a which is provided on the upper parts of the protecting diodes D1 and D2. |
