发明名称 |
METHOD OF FORMING RESISTOR LAYER ON INSULATING BASE SURFACE AND METALLO-ORGANIC RESISTOR FILM |
摘要 |
<p>PURPOSE:To form a resistor layer having a uniform thickness on an insulating base surface by attaching with pressure a metallo-organic resistor layer of a metallo-organic resistor film on the insulating base surface. CONSTITUTION:A metallo-organic resistor film F cut into a proper size is arranged such that its metallo-organic resistor layer 22' contacts with the surface of an insulating base 2. The metallo-organic resistor film F is pressed on the surface of the insulating base 2 by a heater head 24 heated to about 120 deg.C. At this time, the metallo-organic resistor layer 22' of the metallo-organic resistor film F is softened slightly and attached with pressure on the surface of the insulating base 2. When the insulating base 2 having the metallo-organic resistor film F attached thereto is baked in an infrared kiln with a peak temperature 800 deg.C for about 10 minutes, a film body 21 of the metallo-organic resistor film F burns off in the kiln so that a resistor layer 3L will be formed on the surface of the insulating base 2.</p> |
申请公布号 |
JPH0473164(A) |
申请公布日期 |
1992.03.09 |
申请号 |
JP19900187731 |
申请日期 |
1990.07.16 |
申请人 |
FUJI XEROX CO LTD |
发明人 |
SHIROTSUKI YOSHIYUKI;BABA KAZUO |
分类号 |
B41J2/335;H01C7/00;H01C17/06 |
主分类号 |
B41J2/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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