| 摘要 |
PURPOSE:To execute a read-out at a high speed by reading out storage data by a fourth read-out operation for detecting and amplifying a potential difference between a pair of bit lines by a voltage sense type sense amplifier, after a second and a third read-out operations. CONSTITUTION:The above memory is provided with a potential setting means for executing a first read-out operation for setting both of a first and a second bit lines BL1, BL2 to a first potential at the time of read-out, and a potential setting means for executing a second read-out operation for setting them to a second potential. Also, the device is provided with a read-out voltage giving means for executing a third read-out operation, and a voltage sense type sense amplifier 4 for executing a fourth read-out operation for detecting and amplifying a voltage difference between a pair of bit lines BL1, BL2, after a second and a third read-out operations. In such a way, storage data of memory cells of half of memory cessls connected to the same word line can be fetched simultaneously to the voltage type sense amplifier, and read-out can be executed at a high speed. |
