发明名称 MICROWAVE PLASMA TREATMENT APPARATUS WITH MAGNETIC FIELD
摘要 PURPOSE:To make the treatment of a sample uniform, by changing the direction of a microwave to the surface of the sample to be treated, and turning a propagating means in a plane, which is in parallel with the surface of the sample to be treated when the sample undergoes plasma treating, and correcting the deflection of the plasma. CONSTITUTION:A microwave is emitted from a magnetron 1 and propagated to a bell jar 5, a processing chamber formed of insulating material, through a rectangular waveguide 2, a perpendicular-direction changing waveguide 3 and a circular waveguide 4. Plasma is formed by the mutual action between the electric field formed from the microwave and the magnetic field formed from an air-core coil 6. A sample 8 on a sample stage 7 undergoes plasma treatment. A rotary mechanism 9 is provided at a coupling part of the perpendicular-direction changing waveguide 3 and the circular waveguide 4. The rectangular waveguide 2 with the magnetron 1 and the perpendicular- direction changing waveguide 3 are turned as a unitary body in a plane, which is in parallel with the treating surface of the sample 8 to be treated. The amount of radiation of the microwave on the sample 8 is made uniform. Thus the plasma treatment of the sample is made uniform.
申请公布号 JPS63179520(A) 申请公布日期 1988.07.23
申请号 JP19870009845 申请日期 1987.01.21
申请人 HITACHI LTD 发明人 SAIKAI MASAHARU;SATO HITOAKI
分类号 H01L21/302;H01L21/205;H01L21/3065;H01L21/31 主分类号 H01L21/302
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