| 摘要 |
<p>PURPOSE:To attain rapid operation and low power consumption by constituting a memory cell of a bipolar transistor (TR) whose collector is formed in a common collector area. CONSTITUTION:An n-type semiconductor area N(C) to be a common collector area is formed on a p-type semiconductor substrate PSUB and an N<+> area is formed between the N(C) and the PSUB. The area N(C) is connected to a power supply voltage VCC through plural N<+> areas and plural contacts formed in respective N<+> areas. Plural p-type semiconductor areas P(B) functioning as the bases of respective bipolar memory cells are formed in the area N(C) correspondingly to the bipolar memory cells. An isolation area I for separating respective elements is formed in each P(B). Then, (n+1) areas P(B) corresponding to respective lines of the memory array are connected to word lines W0-Wm. Then, n-type semiconductor areas N(E) functioning as the emitters of corresponding bipolar memory cells are formed in respective areas P(B) and connected to data lines D0-Dn.</p> |
