| 摘要 |
PURPOSE:To enable a channel stopper deep as required to be provided in a substrate under a field oxide film excellent in controllability by a method wherein a film provided with a surface step and an organic film which is nearly equal to the former film in penetration depth of ions when ions are implanted are formed, and a diffusion layer is formed in a base film using a mask pattern formed on an organic film. CONSTITUTION:A film 7 such as a conductive film or the like provided with a surface step is formed on a base film 1 such as an Si substrate or the like, and an organic film 11 such as a resist or the like which is nearly equal to the film 7 in penetration depth of ions when ions are implanted is formed covering the film 7 to flatten its surface. Therefore, a prescribed ion implantation condition is properly set for forming a diffusion film 14 such as a channel stopper or the like in the base film 1 under a field oxide film 3, and when ions are implanted into the organic film 11, ions can be almost uniformly diffused into the organic film 11, the film 7 provided with a surface step, the field oxide film 3, and the base film 1. |
