| 摘要 |
PURPOSE:To obtain a superconducting device substrate which can be widely applied to the formation of various kinds of superconducting devices and manufactured at a low cost by a method wherein a superconducting oxide layer serving as a ground layer and an SIS structure composed of multilayered superconducting oxide thin films are provided onto an Si wafer. CONSTITUTION:A superconducting device substrate is composed of an Si wafer 1 serving as a ground, a first superconductive oxide layer 3 serving as a ground plane formed on the Si wafer 1 through the intermediary of a buffer layer 2, and furthermore dielectric layers 4 and 6, a second superconductive oxide layer 5 and a third superconductive oxide layer 7 alternately formed on the first superconductive oxide layer 3. For instance, the buffer layer 2 of ZrO2, the dielectric layers 4 and 6 of Y2O3, and the superconductive oxide layers 3, 5, and 7 of Bi2Sr2Ca2Cu3Oy are laminated to constitute the superconducting device substrate. |
