METHOD OF FABRICATING FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor using an oxide film and a polyimide comprises (A) depositing and coating a first oxide film and a first polyimide layer on the first metal layer formed on the semiconductor substrate, (B) forming a metal layer joining hole into hollow space, (C) depositing a metal layer on the first oxid film nd polyimide layer, (D) depositing and coating a second oxide film and a second polyimide layer on the surfaces of metal layers, and (E) etching back up to the metal layer of the metal layer joining hole to form a second metal layer by filling up the joining hole with the etched metal layer.