发明名称 |
THIN-FILM TRANSISTOR MEMORY |
摘要 |
<p>PURPOSE:To increase an integration degree by a method wherein a lower-part gate electrode is faced with a memory-natured insulating film and a memory transistor and a selective transistor are connected in series at a semiconductor layer. CONSTITUTION:The central part is used as a memory transistor T1 and both of its side parts are used respectively as selective transistors T2. The transistor T1 is constituted of the following: a source electrode and a drain electrode S, D; a semiconductor layer 3; a memory-natured insulating film 4; a lower-part gate insulating film 5; and a lower-part gate electrode G1. The transistors T2 are constituted of the following: the source and drain electrodes S, D; the semiconductor layer 3; the lower-part gate insulating film 5; an upper-part gate insulating film 6; and an upper-part gate electrode G2. The whole region of a part facing the electrode G1 is used as a channel region C1 of the transistor T1 and it is possible to increase an insulating density.</p> |
申请公布号 |
JPH0472675(A) |
申请公布日期 |
1992.03.06 |
申请号 |
JP19900184021 |
申请日期 |
1990.07.13 |
申请人 |
CASIO COMPUT CO LTD |
发明人 |
MATSUMOTO HIROSHI;NAITO HIDEO;YAMADA HIROYASU |
分类号 |
G11C17/00;G11C16/02;G11C16/04;H01L21/8247;H01L27/115;H01L27/12;H01L29/78;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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