| 摘要 |
<p>PURPOSE:To prevent the destruction of the data held by an RS flip-flop circuit that is caused by the glitch noise by controlling the back gate bias voltage of a P channel type MOS transistor TR. CONSTITUTION:The substrate voltage of a P channel type MOS TR is controlled by noting the back gate effect of a MOB TR. In other words, the back gate effect is produced when the substrates of the P channel type MOS TR 6, 7, 10 and 11 are biased to a fixed positive potential via a control terminal 5. Then the drain currents of these TR 6-11 are reduced and therefore the charging currents flowing to the 1st and 2nd output terminals 3 and 4 are also reduced. As a result, the potentials of both terminals 3 and 4 are not satisfactorily reduced and kept at each precedent level if the period of time when a set terminal 1 or a reset terminal 2 is set at logic value 'O' is shorter than the switching speeds of the TR 6-11. Thus the data are never destroyed.</p> |
