| 摘要 |
PURPOSE:To precisely expose a microminiature pattern by varying the quantity of electron beam emitted to the respective positions of a resist layer in accordance with time to allow the positions to be emitted to be left in vacuum after the emission of the electron beam and equalizing the progresses of crosslinking reactions at the respective positions of the resist layer. CONSTITUTION:An electron beam emitted from an electron gun 11 is converged, deflected and emitted to a substrate 18 on which an electron beam sensitive resist is, for example, coated, and an extremely small pattern is sequentially exposed on the respective positions on the substrate 18. The relationship between the vacuum leaving time and the exposure sensitivity is stored in advance in a computer 20 for controlling the emitting conditions or the like of the electron beam in the exposing step, and the quantity of the electron beam at the respective positions is controlled corresponding to the time from the emission of the positions to be emitted to the time in which it is taken out of the vacuum. For instance, it is controlled to lengthen the emitting time at the position in which the leaving time is, for example, shortened and the sensitivity is lowered. Since the difference of the sensitivity depending upon the positions to be emitted on the substrate can be compensated in this manner, the extremely small pattern can be precisely exposed. |
