| 摘要 |
PURPOSE:To obtain the light-receiving section having a high coefficient of photoelectric conversion as well as to restrict the amount of overflowing electric charge by a method wherein, in the CCD type solid-state image pickup element having a meandering channel region, a channel stopper region is complimentarily provided in a jigzag form along either of electrodes and an overflow drain is extended to the channel stopper region. CONSTITUTION:A plurality of P<+> type channel stopper regions 9 are formed by diffusion along the surface of a P type Si substrate 8 and a wide region 9 is provided by positioning it alternately on the specified region among said channel stopper regions. Then, an N type overflow drain region 10 is provided in each stopper region 9, a P-N junction is generated on an interface and used as a chennel section 11 which is making a zigzag form in the substrate 8 located between the P-N junctions. Subsequently, a transparent SiO2 film 12 is coated on the whole surface, a plurality of electrodes 13, which are in right-angle direction to the stopper 9, are provided on the film 12 and an upper electrode 14, which will be arranged in the direction same as the stopper 9, is provided above the electrode 13 by performing an insulating process. Through these procedures, the potential of the stopper region is formed variable and a blooming can also be prevented. |
