VERFAHREN ZUM SCHUTZ VON POLIERTEN SILICIUMOBERFLAECHEN.

摘要

Not more than 10 hrs. after the polished slices have been given a standard clean in oxidising conditions they are exposed to the action of a reagent which is able to cause the attachment of tri-alkylsilane gps. to the wafer-surface. The reagents are from the gp. of hexaalkyldisilazane, pref. hexamethyldisilazane (HMD). The exposure is carried out pref. to the reagent in gas-form in a concn. of up to 15 mg/l. in a carrier-gas for a duration of 0.5-5 mins. The layer formed on the Si-wafer is removed by a thermal oxidn.