| 摘要 |
PURPOSE:To elevate hard-solubility of a resist without increasing operating steps and elevate a remaining film rate of a nonexposing part and mask precision of resist patterns by a method wherein a production step of irradiating the entire resist film by a first X-ray with low energy intensity and a production step of transfering and exposing the mask patterns on the resist film through a mask by a second X-ray with high energy intensity in an atmosphere not containing oxygen. CONSTITUTION:A positive resist film 2 is applied on a semiconductor substrate 1, and, not through a mask, the entire surface is irradiated by a first X-ray with low energy intensity relative to something like 20 to 30% of the energy intensity exposing even the bottom of a resist film 2 to form a hard-solubility. Next, an X-ray mask 7 having absorptive patterns 6A, 6B, 6c, and 6d etc., is disposed in a membrane part 5, and, after an atmosphere 8 not containing oxygen is set, the surface is irradiated through the mask 7 by a second X-ray with the energy intensity exposing completely to the bottom of the resist film 2 to transfer images in a transparent region 9. The resist film of the sensitive region 10 is removed by a developing solution to form resist patterns 12A, 12B, 12C, and 12D etc., on the semiconductor substrate. |
