| 摘要 |
PURPOSE:To obtain a resist capable of being exposed with light in a deep UV region and giving a satisfactory pattern profile fit for half-micron lithography by incorporating a cross-linking agent having a specified structure. CONSTITUTION:When a negative type photosensitive compsn. contg. an alkali- soluble resin, a photo acid generating agent and a cross-linking agent for the alkali-soluble resin acting under acidic conditions is prepd., a substance represented by formula I (where each of R<1>-R<4> is H or alkyl which may have a substituent) is incorporated as the cross-linking agent. The alkali-soluble resin used is not especially limited but has such groups as hydroxyl, carboxyl or sulfonic acid groups. The photo acid generating agent is preferably an acid generating agent which generates an acid under light within the range of 150-300nm. |
