| 摘要 |
PURPOSE:To reduce variations in characteristics due to heat treatment and at the time of aging and to form a Schottky barrier or a resistance contact by forming a thin layer on a compound semiconductor region, forming a metal layer adjacent to the upper surface of the thin layer, and oxidizing the metal layer to form a metal oxide layer to cover the oxide layer. CONSTITUTION:A compound semiconductor region 2 is covered with an amorphous film having a thickness of about 10nm and containing S as a main ingredient. Then, when a semiconductor substrate 1 is left to stand for in vacuum, the amorphous film is almost vanished. In this case, an S thin layer 3 is formed on the region 2. Then, a metal layer 4 made of Ti is formed on the layer 3. Subsequently, when the substrate 1 is left to stand at an ambient temperature in the air, the layer 4 is spontaneously oxidized to be converted to a metal oxide layer 5 made of titanium oxide TiOX. Then, an electrode layer 6 made of Al is formed on the layer 5. |
