发明名称 |
AN X-RAY LITHOGRAPHY SOURCE |
摘要 |
A high-intensity, inexpensive X-ray lithography for the production of integrated circuits. Foil stacks (24) are bombarded with a high-energy electron beam (22) of 25 to 250 MeV to produce a flux (26) of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-prices X-ray source for lithography. |
申请公布号 |
WO9203830(A1) |
申请公布日期 |
1992.03.05 |
申请号 |
WO1991US05971 |
申请日期 |
1991.08.21 |
申请人 |
ADELPHI TECHNOLOGY, INC. |
发明人 |
PIESTRUP, MELVIN, A.;BOYERS, DAVID, G.;PINCUS, CARY, I. |
分类号 |
G03F7/20;G21K1/06;G21K5/08;H01J35/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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