| 摘要 |
PURPOSE:To increase the conversion efficiency by a method wherein the title photovoltaic element is provided with one conductivity type first semiconductor layer having a recession and an inverse conductivity type the second semiconductor layer. CONSTITUTION:An aluminum metallic electrode 2 is formed on a ceramic substrate 1. Next, a seed layer 3 comprising porous polycrystal silicon is formed as if covering the metallic electrode 2. Next, the first semiconductor layer 4 comprising polycrystal silicon is formed using tin as a melt by the liquid deposition process using one conductivity type seed silicon as a material. By this liquid deposition process, the first semiconductor layer 4 is formed along the comb parts 2a of the metallic electrode 2 so as to automatically form a trench part 5 between the comb parts 2a and the semiconductor layer 4. Next, the second semiconductor layer 6 is formed using tin as a melt by the liquid deposition process using inverse conductivity type seed silicon as a material. Then, a contact electrode 7 is formed as if buried in the trench part 5. Furthermore, a reflection preventive film 8 is formed by plasma CVD process as if covering the second semiconductor layer 6 and the contact electrode 7. Through these procedures, the conversion efficiency can be increased. |
