| 摘要 |
PURPOSE:To prevent variation in a barrier height due to heat treating, etc., by forming an electrode layer having a second thickness larger than a first thickness, and generating a Schottky barrier between a semiconductor region and a system formed of a metal oxide layer and the electrode layer. CONSTITUTION:A layer 7 made of Al of metal capable of forming a Schottky barrier to an n-type GaAs is formed on the entire Ti oxide thin layer 6. Then, part of the layer 7 is removed by photoetching, and an Al layer 7 remains oppositely to a region to be formed with the barrier to become a main forward current passage. Further, the layer 6 is removed from the peripheral region of an element by photoetching, and a Ti oxide thin layer 6 disposed at the lower part of an Al layer 7a and a Ti oxide thin layer 6b adjacent thereto for enclosing it remain. Both the Al and the Ti are metals for forming the barrier to the GaAs, and the layer 6b solely forms the barrier in a boundary to an n-type region 3. |
