| 摘要 |
PURPOSE:To process information with low power consumption at a high speed by incorporating a plurality of active regions in a barrier region, enclosing conductive carrier in the active regions, incorporating impurity atoms to be operated as doner in the active regions, and generating electric dipoles due to local existence of the carrier. CONSTITUTION:An active region 6 is formed of a first quantum well 1, a thin barrier film 2, a second quantum well 3, and doner 5. The region 6 is formed of semiconductor having larger electron affinity than that of the barrier region, and can enclose conductive electrons therein. That is, the active region constitutes a quantum enclosing structure. The film 2 is formed of semiconductor having smaller electron affinity than those of the wells l, 3. Impurity atoms to become doner are added to the barrier film. The electrons generated from the doner remains in either first or second quantum well. The height and thickness of energy barrier of the barrier film are so set as to transit electrons by tunnel effect or thermal excitation by finite probability from the wells 1 to 3 or 3 to 1. |
