| 摘要 |
PURPOSE:To obtain a semiconductor device of large current capacity, by a method wherein a single upper main electrode is secured onto the lower main electrode through an insulating mount, and a plurality of semiconductor chips are conductively secured onto the lower main electrode so as to surround the upper main electrode. CONSTITUTION:An upper main electrode 1 is secured onto a lower main electrode 2 through an insulating mount 3. A plurality of semiconductor chips 5 such as transistors, thyristors or the like are soldered onto the lower main electrode 2 through an electrode plate of molybdenum or the like in an approximate circumference shape with the upper main electrode 1 as a center. A control electrode 7 is provided on the periphery of the arrangement of said semiconductor chips 5 so as to be concentric therewith the upper main electrode 1 as a center. Between the control electrode 7 and the lower main electrode 2, an insulating mount 8 is placed in order to electrically insulate them from each other. Each semiconductor chip 5 and the upper main electrode 1 are connected with a metal wire 6, while each semiconductor chip 5 and the control electrode 7 are connected with a metal wire 9. Thereby, an excellent current balance is obtained among the respective semiconductor chips 5. Accordingly, it is possible to obtain a semiconductor device of large current capacity and without any uneven distribution of heat. |
