| 摘要 |
PURPOSE:To achieve a higher speed due to a low resistance of a gate electrode and increase reliability by forming a gate electrode, the cross section of which is recessed, on only the central portion of a channel of a transistor to be data programmed and by performing channel doping through the central portion of the gate electrode so as to write data. CONSTITUTION:Resist films 105-1, 105-2 are formed on a gate oxide film 103 in an element region, and then a tungsten silicide film 106 is deposited thereon. Next, etchback is performed, and tungsten silicide side walls 107-1, 107-2, 107-3 and 107-4 are formed. Next, etching is performed so as to form polycrystal silicon gate electrodes 108-1, 108-2 Next, after source/drain regions 109-1, 109-2 are formed, recessed portions 110-1, 110-2 are formed. Next, a resist film 111 is formed on only a transistor into which data 'OFF' should be written. Boron ion implantation is performed through a gate electrode 8-1. |
