| 摘要 |
<p>A memory control unit for use in a memory system including a plurality of memory banks is arranged to generate row and column address and address strobe signals, on a cycle-by-cycle basis, responsive to an intermediate memory address and control signals provided by a memory bank comparator indicating whether a memory address is valid, which one of the memory banks is being addressed, the type of memory bank being addressed, and whether memory bank interleaving is possible. The memory control unit includes a row and column address assignor which provides the row and column addresses in response to the intermediate memory address and the memory bank comparator. A memory bank selector is also responsive to the intermediate memory address and the memory bank comparator to provide the row and column address strobe signals to the proper memory bank. A memory unit is arranged to permit the row and column address strobe signals to drive equal loads to preclude strobe signal timing skew and the need for external buffers.</p> |
