| 摘要 |
PURPOSE:To develop the resist by a perfect dry process using oxygen plasma and to cleanly strip the resist containing silicon atoms from a substrate by irradiating the resist containing a silyloxy compound and/or a silylamino compound and a radiation sensitive agent for forming an acid by radiation, heating it, and removing the resist by oxygen plasma. CONSTITUTION:The resist film comprising 100pts.wt. of poly-p-trimethylsilyloxy- styrene and 12pts.wt. of p-nitrobenzyl-9,10-diethoxyanthracene-2-sulfonate is formed on the substrate and it is exposed to far ultraviolet rays past a mask for 60sec in an exposing device, and then subjected to a heat treatment on a hot plate at 130 deg.C for 2min, and developed by oxygen plasma in a developing device for 3min to obtain a rectangular resist pattern of 0.65mum width and 1.0mum thickness. |
