| 摘要 |
<p>A semiconductor memory includes capacitors and transistors formed at a main surface of a semiconductor substrate (16, 162), wordlines for applying signals to the gate electrodes of the transistors, and data lines for reading out information stored in the capacitors. Each capacitor includes an electrode with first and second side walls formed by a groove (17) in the substrate (16, 162) to extend substantially vertically to the substrate main surface, with the first sidewall surrounding the second sidewall, and a capacitor plate disposed adjacent to the first and second sidewalls and being separated therefrom by an insulating layer. A large capacitor area is thereby achieved with comparatively small consumption of substrate surface area.</p> |
