发明名称 |
Buried-stripe type semiconductor laser device. |
摘要 |
<p>A buried stripe type semiconductor laser device having a mesa stripe whose side faces are {111} facets and having a current confinement structure under epitaxial layers burying the mesa stripe is disclosed. The buried stripe type semiconductor laser device comprises a (100) semiconductor substrate having a stripe-shaped ridge in the <011> direction, a multilayer film of a double hetero structure formed on the upper surface of the stripe-shaped ridge. The multilayer film includes a laser oscillating active layer of a smaller width than that of the stripe-shaped ridge. The current confinement means are formed at both sides of the mesa stripe on the semiconductor substrate. In addition, a method of fabricating a buried stripe type semiconductor laser device having no raised portion above a mesa stripe of a substrate is disclosed. The laser device can be mounted in position with the epitaxial layer side down, without the mesa stripe being damaged or strained.</p> |
申请公布号 |
EP0473443(A2) |
申请公布日期 |
1992.03.04 |
申请号 |
EP19910307938 |
申请日期 |
1991.08.30 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OKUMURA, TOSHIYUKI;INOGUCHI, KAZUHIKO;KONUSHI, FUMIHIRO;TAKIGUCHI, HARUHISA |
分类号 |
H01L33/00;H01S5/22;H01S5/227;H01S5/323 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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