| 发明名称 |
Wafer processing reactor. |
| 摘要 |
<p>A wafer processing reactor having an input manifold (37) to enable control of a process gas flow profile over a wafer (16) that is being processed. Both process gas relative concentrations and flow rates can be controlled, thereby enabling an increased uniformity of processing across the wafer (16). <IMAGE></p> |
| 申请公布号 |
EP0473067(A1) |
申请公布日期 |
1992.03.04 |
| 申请号 |
EP19910114081 |
申请日期 |
1991.08.22 |
| 申请人 |
APPLIED MATERIALS INC. |
发明人 |
ANDERSON, ROGER N.;LINDSTROM, PAUL R.;JOHNSON, WAYNE |
| 分类号 |
H01L21/285;C23C14/54;C23C16/455;C30B25/14;H01L21/205;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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