| 摘要 |
A process for forming refractory metal ohmic contacts comprises masking a group III-V semiconductor substrate and opening windows thereon. Metal ions are implanted through the window to a sufficient concentration to connect to electronic features in the substrate. Following implantation, a refractory metal ohmic contact is deposited in the same windows and is passivated. Next, the implanted ions are activated by annealing so the refractory metal ohmic contacts are electrically connected to the electrical features in the substrate.
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