发明名称 |
Synthesis method by plasma chemical vapor deposition |
摘要 |
A method of synthesizing metal-containing material by a plasma chemical vapor deposition comprises converting a reactive gas containing metal atoms into plasmas in a reaction chamber and supplying an inert gas from outside the plasma region in the reaction chamber. Ceramic films of excellent quality can be synthesized under stable conditions in an industrial mass production process.
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申请公布号 |
US5093150(A) |
申请公布日期 |
1992.03.03 |
申请号 |
US19900493561 |
申请日期 |
1990.03.14 |
申请人 |
ALPS ELECTRIC CO., LTD. |
发明人 |
SOMENO, YOSHIHIRO;HIRAI, TOSHIO;SASAKI, MAKOTO |
分类号 |
C23C16/34;C23C16/30;C23C16/50;C23C16/511 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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