发明名称 Synthesis method by plasma chemical vapor deposition
摘要 A method of synthesizing metal-containing material by a plasma chemical vapor deposition comprises converting a reactive gas containing metal atoms into plasmas in a reaction chamber and supplying an inert gas from outside the plasma region in the reaction chamber. Ceramic films of excellent quality can be synthesized under stable conditions in an industrial mass production process.
申请公布号 US5093150(A) 申请公布日期 1992.03.03
申请号 US19900493561 申请日期 1990.03.14
申请人 ALPS ELECTRIC CO., LTD. 发明人 SOMENO, YOSHIHIRO;HIRAI, TOSHIO;SASAKI, MAKOTO
分类号 C23C16/34;C23C16/30;C23C16/50;C23C16/511 主分类号 C23C16/34
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