| 摘要 |
PURPOSE:To enable a resist pattern high in precision to be formed on wafers different in height by one time of exposure by providing some openings with a transparent material and giving to exposure light passing through these openings a light path difference longer than the exposure light passing through the other openings located not extremely near to these openings. CONSTITUTION:The exposure light transmitted through a transparent substrate 1 is partly shielded by a chromium pattern 2, and the light passing through the transparent material 3 is extended in light path than the light not passing through the material 3 among the light having passed through the pattern 2 by (1 - 1/n) X d/25, where (d) is the thickness of the material 3 and (n) is its refractive index, thus permitting the image-forming height to be lowered on the surface of the wafer 6 for the light passing through the material 3, and the best image to be formed on the height-lowered part 5, and on the other hand, the light not passing through the material 3 to form the best image on the part 8, and consequently the best image formation to be executed on the surface of the wafer having the height difference in only one time of exposure operation and the fine resist patterns high in precision to be formed. |
