| 摘要 |
<p>A semiconductor nonvolatile memory device includes a static type RAM constituted by a flip-flop circuit having a pair of loads, each load being supplied by separate power sources. An electrically erasable programmable ROM is constituted by a nonvolatile memory transistor operatively connected to the flip-flop circuit. A control circuit controls the supply timing of each of the separate power sources when data stored in the nonvolatile memory transistor is recalled to the flip-flop circuit. In the recall, the supply timing of each of the separate power sources is determined in such a way that the flip-flop circuit is set so as to invert from one state to the other corresponding to the ON/OFF state of the nonvolatile memory transistor.</p> |
