| 摘要 |
A semiconductor device is disclosed in which an area pattern (14) is formed on a portion of a major surface (11a) of a semiconductor substrate over which epitaxial growth layers are formed. In this case, compound semiconductors area (12, 13) formed by an epitaxial growth method, by the utilization of a surface temperature difference between the major surface (11a) of the semiconductor surface and the areas pattern (14) in a heating process. By so doing it is possible to simultaneously obtain the compound semiconductors (12, 13) of a different composition or a different energy gap from each other.
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