发明名称 SEMICONDUCTOR NONVOLATIVE STORAGE ELEMENT AND STORAGE DEVICE
摘要 <p>PURPOSE:To decide the level of a bit line only with operation of cells and to speed up data reading without necessitating a sense amplifier by configurating a memory cell while serially connecting first, second programmable switches. CONSTITUTION:An one memory cell is composed of serially connected first, second programmable switches T1, T2. The serial connection terminal between the switches T1, T2 is connected to an output terminal OUT, the other terminal of the switch T1 is connected to a power supply terminal V1, and the other terminal of the switch T2 is connected to a power supply terminal V2. The switching control gates of the switches T1, T2 are connected to first/second input terminals I1, I2. When a word line to which the memory cell belongs is selected by performing the writing to the memory cell, the first switch T1 is turned on and the second switch T2 is turned off, and vice versa according to a storage data, and the output terminal OUT becomes a grand level or a power supply Vcc level. Thus, high-speed data reading can be performed without necessitating the sense amplifier.</p>
申请公布号 JPH0467396(A) 申请公布日期 1992.03.03
申请号 JP19900175083 申请日期 1990.07.02
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 OGURA KIYONORI
分类号 G11C17/00;G11C16/04;G11C16/06 主分类号 G11C17/00
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